Asymmetric Self-Cascode versus Graded-Channel SOI nMOSFETs for analog applications

Assalti, R.;Pavanello, Marcelo Antonio;Flandre, Denis;de Souza, Michelly
(2015) 2015 30th Symposium on Microelectronics Technology and Devices (SBMicro 2015) — Location: Salvador (31.August.2015)

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Authors
  • Assalti, R.Centro Universitario da Fei, Brazil
    Author
  • Pavanello, Marcelo AntonioCentro Universitario da Fei, Brazil
    Author
  • Flandre, DenisUCLouvain
    Author
  • de Souza, MichellyCentro Universitario da Fei, Brazil
    Author
Abstract
This paper compares the performance of Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs, both proposed to improve the analog performance of fully depleted SOI nMOSFETs. The differences at device level are evaluated and the impact of their application in basic analog circuits, i.e. common-source amplifier, source-follower and common-source current mirror are explored through experimental results.
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Assalti, R., Pavanello, M. A., Flandre, D., & de Souza, M. (2015). Asymmetric Self-Cascode versus Graded-Channel SOI nMOSFETs for analog applications. Proceedings of SBMicro 2015. Published. 2015 30th Symposium on Microelectronics Technology and Devices (SBMicro 2015), Salvador. https://doi.org/10.1109/SBMicro.2015.7298120