On extraction of self-heating features in UTBB SOI MOSFETs

Makovejev, Sergej;Olsen, S.;Andrieu, F.;Poiroux, T.;Kilchytska, Valeriya;et.al.
(2012) 13th International Conference on Ultimate Integration on Silicon (ULIS 2012) — Location: Grenoble (France) (6.March.2012)

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In this work UTBB devices with different BOX thicknesses of 10 and 25 nm are compared in terms of self-heating (SH) effect Different approaches of SH characterisation are assessed. Strengths and weaknesses of every extraction technique when applied to advanced UTBB MOSFETs are discussed. We show that while thermal effects are important even in devices with ultra-thin BOX, the resulting drain current degradation is not severe and is not considerably affected by BOX thickening from 10 to 25 nm. The main SH-related issue is output conductance degradation, which is of great importance for analogue applications.
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Makovejev, S., Olsen, S., Andrieu, F., Poiroux, T., Faynot, O., Flandre, D., Raskin, J.-P., & Kilchytska, V. (2012). On extraction of self-heating features in UTBB SOI MOSFETs. Proceedings of the 13th International Conference on Ultimate Integration on Silicon (ULIS 2012), 109-112. https://doi.org/10.1109/ULIS.2012.6193369