Operation of Lateral SOI Pin Photodiodes with Back-Gate Bias and Intrinsic Length Variation
(2013) 223rd ECS Meeting — Location: Toronto (Canada) (12.May.2013)
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Novo, C., Giacomini, R., Afzalian, A., & Flandre, D. (2013). Operation of Lateral SOI Pin Photodiodes with Back-Gate Bias and Intrinsic Length Variation. Transactions of 223rd ECS Meeting. Published. 223rd ECS Meeting, Toronto (Canada). https://hdl.handle.net/2078.5/253148