Figures-of-Merit Of Intrinsic, Standard-Doped And Graded-Channel SOI And SOS MOSFETs For Analog Baseband And RF Applications
(2003) ECS 11th International Symposium on SOI Technology and Devices — Location: Paris (France) (27.April.2003)
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- Abstract
- Figures-of-merit of non-standard channel engineered devices are presented. We put emphasis on effective analog baseband and RF performance from a circuit designer point of view. Measurements on 0.5 μm Fully-Depleted SOI and SOS processes are discussed. We demonstrate very interesting potential of low-doped and graded-channel devices to lower power consumption and increase gain and frequency performance.
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Levacq, D., Dehan, M., Flandre, D., & Raskin, J.-P. (2003). Figures-of-Merit Of Intrinsic, Standard-Doped And Graded-Channel SOI And SOS MOSFETs For Analog Baseband And RF Applications. Proceedings of the ECS 11th International Symposium on SOI Technology and Devices, 295-300. https://hdl.handle.net/2078.5/253140