Compact small-signal model for RF FinFETs

Alvarado, J.;Tinoco, J.C.;Kilchytska, Valeriya;Flandre, Denis;Contreras, E.;et.al.
(2012) 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS 2012) — Location: Playa del Carmen (Mexico) (14.March.2012)

Files

CompactSmall-SignalModelforRFFinFETs.pdf
  • Restricted Access
  • Adobe PDF
  • 559.49 KB
Request a copy

Details

Authors
Show more
Abstract
Modeling of the small-signal equivalent circuit of SOI FinFETs through SPICE simulations is presented. A compact model implemented in Verilog-A predicts well the DC characteristics of RF SOI FinFETs and allows the extraction of the intrinsic conductance, transconductance and capacitances at any selected operating point. The intrinsic small-signal equivalent circuit composed of those extracted lumped elements is used in SPICE simulator. This paper compares the parameters extracted from both DC and wideband S-parameter methods.
Affiliations

Citations

  • APA
  • Chicago
  • FWB

Alvarado, J., Tinoco, J. C., Kilchytska, V., Flandre, D., Raskin, J.-P., Cerdeira, A., & Contreras, E. (2012). Compact small-signal model for RF FinFETs. Proceedings of the 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS 2012), 1-4. https://doi.org/10.1109/ICCDCS.2012.6188936