Impact of Self-Heating on UTB MOSFET Parameters
(2014) 10th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EUROSOI 2014) — Location: Tarragona (Spain) (27.January.2014)
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- Abstract
- Impact of self-heating in ultra-thin body (UTB) devices on 145 nm-thick buried oxide (BOX) is characterized. Its effect on the output conductance, the transconductance, the voltage gain and the drain current is quantified. It is found that the main impact of self-heating is on the output conductance and the gain. It is shown that the saturation threshold voltage can also be slightly affected by self-heating.
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Citations
Makovejev, S., Barraud, S., Poiroux, T., Rozeau, O., Raskin, J.-P., Flandre, D., & Kilchytska, V. (2014). Impact of Self-Heating on UTB MOSFET Parameters. Proceedings of the 10th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EUROSOI 2014). Published. 10th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EUROSOI 2014), Tarragona (Spain). https://hdl.handle.net/2078.5/253138