High-Temperature Behavior of fully-Depleted SOI MOSFETS in Case of Charge Instability of Buried Oxide
(2005) ECS Meeting, SOI Symposium — Location: Quebec (Canada) (15.May.2005)
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- Abstract
- Operation of fully depleted inversion mode SOI n-MOSFET, fabricated on UNIBOND wafers, in wide range of temperatures (25-320°C), was investigated. Observed kink in the IdVfg characteristics and unusual behavior of IdVd characteristics in case of the back-gate bias changing from negative to positive values was explained by model of positive charge (protons) generation at the substrate/BOX interface during negative back-gate bias applying, and fast ion drift towards the BOX/Si film interface at zero or positive back-gate bias, with the subsequent neutralization of this charge by electrons from back channel ofMOSFET. The neutralization can be driven by the front-gate voltage because of the charge coupling effect.
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Citations
Nazarov, A., Houk, Y., Vovk, Ya. N., Lysenko, V. S., & Flandre, D. (2005). High-Temperature Behavior of fully-Depleted SOI MOSFETS in Case of Charge Instability of Buried Oxide. Proceedings of the ECS Meeting, SOI Symposium, 113-118. https://hdl.handle.net/2078.5/253135