Low frequency noise in submicron Graded-Channel SOI MOSFETs

Nemer, J.P.;de Souza, Michelly;Flandre, Denis;Pavanello, Marcelo Antonio
(2013) 2013 Symposium on Microelectronics Technology and Devices (SBMicro) — Location: Curutiba (Brazil) (2.September.2013)

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Authors
  • Nemer, J.P.Centro Universitario da FEI, Brazil
    Author
  • de Souza, MichellyCentro Universitario da FEI, Brazil
    Author
  • Flandre, DenisUCLouvain
    Author
  • Pavanello, Marcelo AntonioCentro Universitario da FEI, Brazil
    Author
Abstract
The origin of the low-frequency noise in submicron fully depleted Graded-Channel (GC) SOI MOSFET is investigated in terms of the channel length comparing two different technologies, OKI semiconductors and UCL.
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Nemer, J. P., de Souza, M., Flandre, D., & Pavanello, M. A. (2013). Low frequency noise in submicron Graded-Channel SOI MOSFETs. 2013 Symposium on Microelectronics Technology and Devices (SBMicro), Curutiba (Brazil). https://doi.org/10.1109/SBMicro.2013.6676173