Unusual gate current transient behavior in SOI MOSFETs
(2005) 2005 IEEE International SOI Conference — Location: Hawaii (USA) (3.October.2005)
Files
No attached file found for this publication.
Details
- Authors
- Abstract
- We report unusual gate current variations with gate bias and time in accumulation regime. Measurements and simulations show the importance of the time-dependent floating body potential in both partially and fully depleted SOI MOSFETs. These variations during front-gate voltage scan and the resulting transient gate current are discussed as a combination of several mechanisms such as capacitive coupling, SRH generation, band-to-band tunneling and impact ionization. The gate current behavior is important for EEPROMs and depends on the device geometry and operating conditions.
- Affiliations
Citations
Bawedin, M., Cristoloveanu, S., & Flandre, D. (2005). Unusual gate current transient behavior in SOI MOSFETs. In IEEE (ed.), Proceedings of the 2005 IEEE International SOI Conference (pp. 67-69). https://doi.org/10.1109/SOI.2005.1563536