Effect of channel doping concentration on the harmonic distortion of asymmetric n- and p-type self-cascode MOSFETs
(2015) 2015 30th Symposium on Microelectronics Technology and Devices (SBMicro 2015) — Location: Salvador (31.August.2015)
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EffectofChannelDopingConcentrationontheHarmonicDistortionofAsymmetricn-andp-typeSelf-cascodeMOSFETs.pdf
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- Abstract
- This paper compares the harmonic distortion of n- and p-type symmetric (S-SC) and asymmetric self-cascode (A-SC) structures of different channel doping concentrations, providing a physic analysis of its behavior. This study is made by experimental measurements of structures composed by n- and p-type MOSFETs taking the second and third order harmonics as figures of merit. For strong inversion, the normalized second order harmonic distortion was better for the A-SC structures composed by devices with lower channel doping concentration on the transistor near the drain for either n- and p-type composite MOSFETs.
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Citations
d’Oliveira, L. M., Doria, R. T., Pavanelo, M. A., Flandre, D., & de Souza, M. (2015). Effect of channel doping concentration on the harmonic distortion of asymmetric n- and p-type self-cascode MOSFETs. Proceedings of SBMicro 2015. Published. 2015 30th Symposium on Microelectronics Technology and Devices (SBMicro 2015), Salvador. https://hdl.handle.net/2078.5/253098