Recombination current and carrier lifetime extraction in dual-gate fully depleted SOI devices
(1998) 28th European Solid-State Research Conference (ESSDERC 1998) — Location: Bordeaux (France) (22.September.1998)
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Ernst, T., Cristoloveanu, S., Vandooren, A., Colinge, J.-P., & Flandre, D. (1998). Recombination current and carrier lifetime extraction in dual-gate fully depleted SOI devices. Proceedings of the 28th European Solid-State Research Conference (ESSDERC 1998). 28th European Solid-State Research Conference (ESSDERC 1998), Bordeaux (France). https://hdl.handle.net/2078.5/253097