Parameter Extraction in Quadratic Exponential Junction Model with Series Resistance using Global Lateral Fitting
(2010) ECS Transactions — Vol. 31, n° 1, p. 369-376 (2010)
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- Authors
- Abstract
- A global lateral fitting procedure is proposed to extract the parameters of quadratic double exponential junction models in the presence of parasitic series resistance. Error analysis of the extracted parameters values within a large representative family of synthetic data indicate excellent match between the extracted values and a wide range of the original given model parameters. The procedure was also tested on real data to extract the model parameters of an experimental Silicon PIN diode measured at cryogenic temperature.
- Affiliations
Simón Bolívar University, Caracas, Venezuela Centro Universitário da FEI, São Bernardo do Campo, SP, Brazil
Citations
Lugo-Munoz, D., de Souza, M., Pavanello, M., Flandre, D., Muci, J., Ortiz-Conde, A., & Garcia Sanchez, F. J. (2010). Parameter Extraction in Quadratic Exponential Junction Model with Series Resistance using Global Lateral Fitting. ECS Transactions, 31(1), 369-376. https://hdl.handle.net/2078.5/253093 (Original work published 2010)