A compact model for single event effects in PD SOI sub-micron MOSFETs
(2012) IEEE Transactions on Nuclear Science — Vol. 59, n° 4, p. 943-949 (2012)
Files
AcompactmodelforsingleeventeffectsinPDSOIsub-micronMOSFETs.pdf
Restricted Access - Adobe PDF
- 1.38 MB
Details
- Authors
- Abstract
- This paper presents a compact model implemented in Verilog-A for partially depleted (PD) silicon-on-insulator (SOI) sub-micron MOSFETs, which allows for describing the Single Events Effects (SEE) produced by heavy ions. This Verilog-A module can be coupled with Spice simulator in order to have faster (time-efficient) circuit simulations with good agreement. Due to the physical aspects considered in the model, better flexibility than the standard current source method is achieved. Experimental data for 0.15 and ${0.13}~mu{rm m}$ technology nodes are used to validate our model. Robustness of the model to reproduce experimental results is demonstrated on three data-sets available in literature: 1) single event transient current in stand-alone n-FET from ${0.13}~mu{rm m}$ PD SOI process hinted by heavy ions at different positions; 2) SEE propagation in path delay with ten inverters realized in ${0.13}~mu{rm m}$ PD SOI process; 3) 6T SRAMs with active element delay on SEE-rad-hardened $0.15~mu{rm m}$ PD SOI process.
- Affiliations
Citations
Alvarado Pulido, J. J., Kilchytska, V., Boufouss, E. H., Soto-Cruz, B. S., & Flandre, D. (2012). A compact model for single event effects in PD SOI sub-micron MOSFETs. IEEE Transactions on Nuclear Science, 59(4), 943-949. https://doi.org/10.1109/TNS.2012.2201957 (Original work published 2012)