Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width
(2011) Applied Physics Letters — Vol. 98, n° 11, p. 112102 (2011)
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- Abstract
- The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for nonsegregated contacts separated by micrometer-sized gaps. Still, an excess of current occurs at low temperature for short contact separations or dopant-segregated contacts when the voltage applied to the device is sufficiently high. From two-dimensional self-consistent nonequilibrium Green’s function simulations, the dependence of the Schottky barrier profile on the applied voltage, unaccounted for in usual thermionic-field emission models, is found to be the source of this deviation.
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Citations
Reckinger, N., Tang, X., Dubois, E., Larrieu, G., Flandre, D., Raskin, J.-P., & Afzalian, A. (2011). Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width. Applied Physics Letters, 98(11), 112102. https://doi.org/10.1063/1.3567546 (Original work published 2011)