CAD-compatible model for accumulation-mode (AM) SOI pMOSFETs
(1997) IEEE International SOI Conference 1997 — Location: Tenya Lodge (USA) (6.October.1997)
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- Authors
- Abstract
- The models presented so far for accumulation-mode (AM) SOI MOSFETs are not very appropriate for mixed analog-digital circuit simulation, since they use different equations with abrupt transitions between the different regimes and they do not consider the short-channel effects nor charge conservation. In this paper we present an explicit model for the drain current and intrinsic capacitances of AM SOI pMOSFET model, based on physical principles and on approximate unified expressions of the mobile charge densities. The model shows good agreement with short-channel device measurements. Our AM model may be combined with our unified FD SOI MOSFET model in order to reliably simulate SOI CMOS circuits, in particular for low-voltage low-power analog applications.
- Affiliations
Rensselaer Polytech. Inst. Dept. of Electr. Comput. & Syst. Eng.
Citations
Iniguez, B., Gentinne, B., Dessard, V., & Flandre, D. (1997). CAD-compatible model for accumulation-mode (AM) SOI pMOSFETs. Proceedings of the IEEE International SOI Conference, 1997, 92-93. https://hdl.handle.net/2078.5/253072