Peculiarities of the temperature behaviour of SOI MOSFET's in the deep submicron area
(2003) 2003 IEEE International SOI Conference — Location: Newport Beach (USA) (29.September.2003)
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- Abstract
- In this paper, the temperature dependence of transistor fabricated in a thin film deep submicron SOI MOSFET fully depleted process, junction leakage current and transconductance were evaluated.
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Citations
Vancaillie, L., Kilchytska, V., Delatte, P., Demeûs, L., Matsuhashi, H., Ichikawa, F., & Flandre, D. (2003). Peculiarities of the temperature behaviour of SOI MOSFET’s in the deep submicron area. Proceedings of the 2003 IEEE International SOI Conference, 78-79. https://doi.org/10.1109/SOI.2003.1242906