Electrical Characterisation and Special Properties of FinFET Structures

Rudenko, Tamara;Kilchytska, Valeriya;Collaert, N.;Jurczak, Malgorzata;Flandre, Denis;et.al.
(2006) NATO Advanced Research Workshop “Nanoscaled Semiconductor-on-Insulator Structures and Devices” — Location: Sudak/Crimea (Ukrain)

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Authors
  • Rudenko, TamaraLashkaryov Institute of Semiconductor Physics (ISP), Kyiv
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  • Kilchytska, ValeriyaUCLouvain
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  • Collaert, N.IMEC
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  • Jurczak, MalgorzataUkraine National Academy of Science
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  • Flandre, DenisUCLouvain
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Abstract
This paper presents a review into the experimental studies of the effective channel mobility and intrinsic gate leakage current in triple-gate FinFET structures with doped- and undoped-channels and different gate stacks. The characteristics of narrow-fin devices are studied as compared to those of quasi-planar (very-wide fin) devices, and as a function of the fin width. Special features in the behavior of narrow FinFETs are analyzed.
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Rudenko, T., Kilchytska, V., Collaert, N., Jurczak, M., Nazarov, A., & Flandre, D. (2006). Electrical Characterisation and Special Properties of FinFET Structures. Abstracts of NATO Advanced Research Workshop “Nanoscaled Semiconductor-on-Insulator Structures and Devices. Published. NATO Advanced Research Workshop “Nanoscaled Semiconductor-on-Insulator Structures and Devices”, Sudak/Crimea (Ukrain). https://hdl.handle.net/2078.5/253065