Wide-band simulation and characterization of digital substrate noise in SOI technology

Bol, David;Ambroise, Renaud;Roda Neve, Cesar;Raskin, Jean-Pierre;Flandre, Denis
(2007) 2007 IEEE International SOI Conference — Location: Indian Wells, CA, USA (1.October.2007)

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The rising integration level of mixed-signal integrated circuits raises new issues for designers. Substrate noise generated by the switching digital part has a detrimental impact on the performance of the analog/RF parts. This contribution introduces simulation and experimental characterization of so-called "digital substrate noise" on a 0.13- mu m SOI CMOS process with high resistivity (HR) substrate. To the authors knowledge, it is the first time that that it is addressed in SOI technology at circuit level.
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Bol, D., Ambroise, R., Roda Neve, C., Raskin, J.-P., & Flandre, D. (2007). Wide-band simulation and characterization of digital substrate noise in SOI technology. Proccedings 2007 IEEE International SOI Conference, 133-134. https://hdl.handle.net/2078.5/253064