Self-Heating in 28 nm Bulk and FDSOI

Makovejev, Sergej;Planes, N.;Haond, M.;Flandre, Denis;Kilchytska, Valeriya;et.al.
(2015) 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2015) — Location: Bologne (Italie) (26.January.2015)

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Abstract—In this work self-heating and its effect on device parameters are compared in 28 nm technology bulk and FDSOI MOS devices. It is found that the thermal resistance is ~3.4 times higher and the temperature rise is ~2.5 times higher in FDSOI than in bulk. However, in spite of stronger self-heating, FDSOI devices outperform bulk over a wide frequency range. Moreover, device parameters degradation with temperature is attenuated in FDSOI transistors.
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Makovejev, S., Planes, N., Haond, M., Flandre, D., Raskin, J.-P., & Kilchytska, V. (2015). Self-Heating in 28 nm Bulk and FDSOI. Proceedings of EUROSOI-ULIS 2015, 41-44. https://doi.org/10.1109/ULIS.2015.7063768