Comparison of Graded-Channel and Self-Cascode SOI MOS TransistorsSanz, Maria Teresa;Celma, Santiago;Calvo, Belen;Flandre, Denis(2003) 4ª Conferencia de Dispositivos Electrónicos (CDE-2003) — Location: Calella de la Costa - Barcelona (Spain) (12.February.2003)
FilesNo attached file found for this publication.DetailsAuthorsSanz, Maria TeresaAuthorCelma, SantiagoAuthorCalvo, BelenAuthorFlandre, DenisUCLouvainAuthorAffiliationsUCLouvainFSA/ELEC - Département d'électricitéShow moreCitations APA Chicago FWB Sanz, M. T., Celma, S., Calvo, B., & Flandre, D. (2003). Comparison of Graded-Channel and Self-Cascode SOI MOS Transistors. Proceedings of the 4ª Conferencia de Dispositivos Electrónicos (CDE-2003), II-11. https://hdl.handle.net/2078.5/253022