Highly Reflective Rear Surface Passivation Design For Ultra-Thin Cu(In,Ga)Se² Solar Cells
(2014) Thin Solid Films — Vol. 582, p. 300-303 (2014)
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- Abstract
- Al2O3 rear surface passivated ultra-thin Cu(In,Ga)Se2 (CIGS) solar cells with Mo nano-particles (NP) as local rear contacts are developed to demonstrate their potential to improve optical confinement in ultra-thin CIGS solar cells. The CIGS absorber layer is 380 nm thick and the Mo NP are deposited uniformly by an up-scalable technique and have typical diameters of 150 to 200 nm. The Al2O3 layer passivates the CIGS rear surface between the Mo NP, while the rear CIGS interface in contact with the Mo NP is passivated by [Ga]/([Ga] + [In]) (GGI) grading. It is shown that photon scattering due to the Mo NP contributes to an absolute increase in short circuit current density of 3.4 mA/cm2; as compared to equivalent CIGS solar cells with a standard back contact.
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Citations
Vermang, B., Wätjen, J. T., Fjällström, V., Rostvall, F., Edoff, M., Gunnarsson, R., Pilch, I., Helmersson, U., Kotipalli, R. V. R., Henry, F., & Flandre, D. (2014). Highly Reflective Rear Surface Passivation Design For Ultra-Thin Cu(In,Ga)Se² Solar Cells. Thin Solid Films, 582, 300-303. https://doi.org/10.1016/j.tsf.2014.10.050 (Original work published 2014)