Low power highly linear temperature sensor based on SOI lateral PIN diodes
(2016) 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) — Location: Burlingame (USA) (10.October.2016)
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- Abstract
- This work presents a highly linear temperature sensors implemented with SOI Lateral PIN Diodes, for low-power applications, biased on the exponential region of the I-V characteristics. Experimental results are shown for temperatures ranging between 150 K and 400 K, showing that depending on the selected bias currents, the linearity can be improved in comparison to a single SOI PIN diode. Simulations results show that the sensing range can be extended for both lower and higher temperatures maintaining high linearity.
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Citations
de Souza, M., Pavanello, M. A., & Flandre, D. (2016). Low power highly linear temperature sensor based on SOI lateral PIN diodes. 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Burlingame (USA). https://hdl.handle.net/2078.5/253011