Variability of UTBB MOSFET Analog Figures of Merit in Wide Frequency Range

Makovejev, Sergej;Kazemi Esfeh, Babak;Raskin, Jean-Pierre;Kilchytska, Valeriya;Haond, M.;et.al.
(2014) 2014 4th European Solid State Device Research Conference (ESSDERC 2014) — Location: Venise (Italie) (22.September.2014)

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Abstract
Inter-die variability of analog figures of merit of ultra-thin body and buried oxide (UTBB) FDSOI MOSFETs was studied in a wide frequency range. We demonstrate that variability in the entire frequency range is small and does not exceed 5%, which is considerably less than in previously published results on SOI FinFETs. An effect of frequency on the analog figures of merit variability is discussed and preliminary explanation is proposed.
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Makovejev, S., Kazemi Esfeh, B., Raskin, J.-P., Kilchytska, V., Flandre, D., Barral, V., Planes, N., & Haond, M. (2014). Variability of UTBB MOSFET Analog Figures of Merit in Wide Frequency Range. Proceedings of the 2014 4th European Solid State Device research Conference (ESSDERC 2014), 222-225. https://doi.org/10.1109/ESSDERC.2014.6948800