Influence of drain voltage on MOSFET threshold voltage determination by transconductance change and gm/Id methods

Rudenko, T.;Kilchytska, Valeriya;Md Arshad, Mohd Khairuddin;Raskin, Jean-Pierre;Flandre, Denis;et.al.
(2011) The 12th International Conference on Ultimate Integration on Silicon – ULIS 2011 — Location: Tyndall Institute, Cork, Ireland (14.March.2011)

Files

No attached file found for this publication.

Details

Authors
Show more
Affiliations

Citations

  • APA
  • Chicago
  • FWB

Rudenko, T., Kilchytska, V., Md Arshad, M. K., Raskin, J.-P., Nazarov, A., & Flandre, D. (2011). Influence of drain voltage on MOSFET threshold voltage determination by transconductance change and gm/Id methods. Proceedings of the 12th International Conference on Ultimate Integration on Silicon – ULIS 2011, 150-153. https://hdl.handle.net/2078.5/253000