Improvement of high-frequency FinFET performance by fin width engineering
(2012) IEEE 2012 International SOI Conference (SOI’12) — Location: Napa (USA) (1.October.2012)
Files
ImprovementofHigh-FrequencyFinFETPerformancebyFinWidthEngineering.pdf
Restricted Access - Adobe PDF
- 137.79 KB
Details
- Authors
- Abstract
- Frequency dependent behaviour of MOSFETs arises from self-heating and source-to-drain coupling through the substrate. In this work the output conductance variation with frequency is experimentally investigated in FinFETs with various fin widths. We demonstrate that fin narrowing suppresses the output conductance degradation due to the substrate effect in the high-frequency range such that self-heating dominates the output conductance variation. The work thus emphasizes the importance of thermal management and device design in FinFETs.
- Affiliations
Citations
Makovejev, S., Olsen, S. H., Md Arshad, K., Flandre, D., Raskin, J.-P., & Kilchytska, V. (2012). Improvement of high-frequency FinFET performance by fin width engineering. Proceedings of the IEEE 2012 International SOI Conference (SOI’12), 58-59. https://doi.org/10.1109/SOI.2012.6404381