Properties and Aging of Bottom-Contact CuO/Au Transmission Line Model (TLM) Structures
(2024) IEEE Transactions on Electron Devices — p. 6254-6260 (2024)
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- The bottom-contact CuO/Au transmission line model (TLM) structures have been fabricated and measured both in N 2 and vacuum for the first time to obtain a cleaner CuO/Au interface by avoiding the exposure of the interface to the ambiance, compared to top-contact structures. Considering different strip widths, CuO/Au TLM structures measured in N 2 show typical width-normalized contact resistances ( R c⋅W ) of ∼ 2.6 k Ω ⋅ cm, which is relatively low compared to the total resistance of CuO. The linearity of I – V curves further indicates an ohmic contact between Au and CuO. All the CuO/Au TLM structures measured in N 2 right after fabrication show repeatable and reliable effective contact resistivities ( ρc-eff ) of ∼ 0.55 Ω ⋅ cm 2 regardless of the increased R c with decreasing CuO widths. Measured in vacuum, other thinner, more resistive CuO/Au TLM structures fabricated by the same processes exhibit lower R c⋅W of ∼ 1.8 k Ω ⋅ cm and record low ρc-eff of ∼ 0.05 Ω ⋅ cm 2 that might be related to the reduction of the transfer length with the increase of the CuO sheet resistance. Further investigating the CuO/Au TLM structures, the degradations of sheet and contact resistances have been observed along time for the first time when measuring the devices in vacuum at room temperature. Such aging is significantly accelerated at 100 ∘ C. The lack of stability of CuO/Au contacts we investigated might shine some light on the discrepancy of results widely reported in literature.
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Zeng, X., Zhukova, M., Faniel, S., Li, G., & Flandre, D. (2024). Properties and Aging of Bottom-Contact CuO/Au Transmission Line Model (TLM) Structures. IEEE Transactions on Electron Devices, 6254-6260. https://hdl.handle.net/2078.5/252975 (Original work published 2024)