Advantages and Challenges of Advanced MOSFETs for Analog and RF Applications

Kilchytska, Valeriya;Makovejev, Sergej;Raskin, Jean-Pierre;Flandre, Denis
(2014) 2014 CMOS Emerging Technologies Research Symposium (CMOSETR 2014) — Location: Grenoble (France) (6.July.2014)

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Abstract
Nowadays, two main contenders are widely recognized as able to satisfy ITRS requirements for the device downscalingtowards 20nm and beyond: (i) planar fully depleted (FD) silicon-on-insulator (SOI) with ultra-thin body and burried oxide (UTBB) MOSFETs; (ii) multiple-gate MOSFETs. This talk assesses these devices for the analog/RF applications through key figures such as transconductance, output conductance, intrinsic gain, cut-off frequencies. We do not conclude on the best choice for analog/RF, but highlight common features and specificities. Importance of wide-frequency band measeurements for proper device assessemnt is emphasized. Particular attention is paid to enormous impact of parasitic elements on device performance.
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Kilchytska, V., Makovejev, S., Raskin, J.-P., & Flandre, D. (2014). Advantages and Challenges of Advanced MOSFETs for Analog and RF Applications. Abstratcs - CMOS Emerging Technologies Research Symposium, p. 33. https://hdl.handle.net/2078.5/252963