Advanced SOI CMOS technology for RF applications
(1998) URSI International Symposium on Signals, Systems, and Electronics, 1998 (ISSSE 1998) — Location: Pisa (Italy) (22.September.1998)
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- Abstract
- Thin film fully depleted silicon-on-insulator CMOS technology, devices and circuits for RF applications are presented. These submicron MOSFET transistors can achieve a maximum oscillation frequency of 30 GHz for a 1 V power supply. This kind of performance and the advantages of the SOI transistors fit the needs for low-voltage low-power RF applications. To demonstrate the capabilities of this technology we present a single stage OTA with a fT of 1.1 GHz and φM of 30°, and two CMOS mixers with exceptional linearity results.
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Citations
Demeûs, L., Chen, J., Eggermont, J.-P., Gillon, R., Raskin, J.-P., Vanhoenacker-Janvier, D., & Flandre, D. (1998). Advanced SOI CMOS technology for RF applications. Proceedings of the URSI International Symposium on Signals, Systems, and Electronics, 1998 (ISSSE 1998), 134-139. https://doi.org/10.1109/ISSSE.1998.738053