Total Ionizing Dose Effects on the Digital performance of Irradiated OCTO and Conventional Fully Depleted SOI MOSFET

de Souza Fino, Leonardo Navarenho;Aparecida Guazzelli da Silveira, Marcilei;Renaux, Christian;Flandre, Denis;Pinillos Gimenez, Salvador
(2013) 14th European Conference on radiation and its Effects on Components and Systems (RADECS 2013) — Location: Oxford (UK) (23.September.2013)

Files

TotalIonizingDoseEffectsontheDigitalPerformanceofirradiatedOCTOandConventionalFullyDepletedSOIMOSFET.pdf
  • Restricted Access
  • Adobe PDF
  • 981.87 KB
Request a copy

Details

Authors
  • de Souza Fino, Leonardo NavarenhoCentro Universitario da FEI, Brazil
    Author
  • Aparecida Guazzelli da Silveira, MarcileiCentro Universitario da FEI, Brazil
    Author
  • Renaux, ChristianUCLouvain
    Author
  • Flandre, DenisUCLouvain
    Author
  • Pinillos Gimenez, SalvadorCentro Universitario da FEI, Brazil
    Author
Abstract
This paper investigates and compares experimentally the total ionizing dose (TID) effects in digital parameters of the fully depleted (FD) OCTO Silicon-On-Insulator (SOI) n-type Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) (OSM), that presents an octagonal gate geometry, versus its conventional (rectangular gate geometry) counterpart (CSM). The main digital parameters taken into account in this study are the threshold voltage (VTH), subthreshold slope (SS), on-state drain current (ION) characteristics. This work demonstrates that OCTO layout style achieved higher radiation tolerance in terms of VTH and SS relative variation and keeping the higher ION performance, due to the LCE and PAMDLE effects existent in the OCTO layout style. In addition the OSM had a significant improvement in terms of the leakage drain current (ILEAK), whereas the CSM ILEAK performance was degraded.
Affiliations

Citations

  • APA
  • Chicago
  • FWB

de Souza Fino, L. N., Aparecida Guazzelli da Silveira, M., Renaux, C., Flandre, D., & Pinillos Gimenez, S. (2013). Total Ionizing Dose Effects on the Digital performance of Irradiated OCTO and Conventional Fully Depleted SOI MOSFET. 14th European Conference on radiation and its Effects on Components and Systems (RADECS 2013), Oxford (UK). https://hdl.handle.net/2078.5/252957