Specific features of the capacitance and mobility behaviors in finfet structures
(2005) 35th European Solid-State Device Research Conference (ESSDERC 2005) — Location: Grenoble (France) (12.September.2005)
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- Abstract
- This paper discusses experimental characterization of the gate-to-channel capacitance and the effective mobility in two types of FinFET structures: 1) with poly-Si/SiO2 and 2) TaN/high-k dielectric gate stacks. Surprisingly, these two systems exhibit the same common features in terms of mobility and capacitance behavior of narrow-fin devices vs. quasi-planar wide-fin devices in spite of their rather different fabrication processes. Specific features revealed in effective capacitance and mobility behaviors of narrow-fin devices are discussed. We suggest that observations of the essentially lower effective dielectric capacitance and improved mobility values, in particular, the electron mobility, in narrow-fin devices compared to wide-fin devices (for both poly-Si/SiO2 and TaN/high-k dielectric gate stacks) is related to a deeper inversion charge centroid in FinFETs operating in double-gate regime.
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Rudenko, T., Kilchytska, V., Collaert, N., De Gendt, S., Rooyackers, R., Jurczak, M., & Flandre, D. (2005). Specific features of the capacitance and mobility behaviors in finfet structures. Proceedings of the 35th European Solid-State Device Research Conference (ESSDERC 2005), 85-88. https://doi.org/10.1109/ESSDER.2005.1546591