Trigate NanoWire MOSFETs Analog Figures of Merit

Kilchytska, Valeriya;Makovejev, Sergej;Barraud, S.;Poiroux, T.;Flandre, Denis;et.al.
(2014) 10th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EUROSOI 2014) — Location: Tarragona (Spain) (27.January.2014)

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Abstract
This work studies, for the first time to our best knowledge, the perspectives of trigate nanowire (TGNW) MOSFETs for analog applications. Effect of nanowire width, length and orientation on analog Figures-of-Merit (FoM) is analyzed. Benchmarking with other advanced devices such as ultra-thin body and BOX (UTBB) MOSFETs and SOI-based FinFETs is presented. TGNW MOSFETs are shown to be very promising for analog applications featuring high transconductance combined with high intrinsic gain.
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Kilchytska, V., Makovejev, S., Barraud, S., Poiroux, T., Raskin, J.-P., & Flandre, D. (2014). Trigate NanoWire MOSFETs Analog Figures of Merit. Proceedings of the 10th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EUROSOI 2014), p. 2. https://hdl.handle.net/2078.5/252952