Special Features of the Back-Gate Effects in UTB SOI MOSFETs

Rudenko, T.;Kilchytska, Valeriya;Raskin, Jean-Pierre;Andrieu, F.;Flandre, Denis;et.al.
(2010) 6th International SemOI Conference and 1st Ukrainian-French Seminar “Semiconductor-on-Insulator materials, devices and circuits: physics, technology and diagnostics” — Location: Kyiv, Ukraine (25.October.2010)

Files

No attached file found for this publication.

Details

Authors
Show more
Abstract
Ultra-thin body silicon-on-insulator (SOI) MOSFET is considered to be a strong candidate for ultimate scaling of CMOS technologies, because of its excellent suppression of the short-channel effects, even without the use of channel doping. Apart from undoped ultra-thin silicon body, nowadays SOI MOSFETs also feature ultra-thin gate high-k gate dielectrics and thin buried oxides. These innovating features bring about special electrical properties. In this work, we describe some of these properties revealed via the back-gate effects, including special behaviors of interface coupling, transport properties and gate tunneling currents, which may be beneficial for the back-gate control schemes.
Affiliations

Citations

  • APA
  • Chicago
  • FWB

Rudenko, T., Kilchytska, V., Raskin, J.-P., Andrieu, F., Faynot, O., Le Tiec, Y., Landry, K., Nazarov, A., & Flandre, D. (2010). Special Features of the Back-Gate Effects in UTB SOI MOSFETs. Proceedings of the 6th International SemOI Conference and 1st Ukrainian-French Seminar “Semiconductor-on-Insulator materials, devices and circuits: physics, technology and diagnostics”, 18-19. https://hdl.handle.net/2078.5/252946