Continuous compact model for MuGFETs simulations

Alvarado, Joaquin;Kilchytska, Valeriya;Flandre, Denis;Conde, J.;Cerdeira, A.;et.al.
(2009) 2009 MIXDES-16th International Conference Mixed Design of Integrated Circuits & Systems (MIXDES) — Location: Lodz, Poland (25.June.2009)

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Abstract
This work presents an analytical continuous compact model for FinFETs which is based on the doped symmetrical double gate model. Our model covers a wide range of technological parameters including different doping concentrations from 1 * 10/sup 14/ to 3 * 10/sup 18/ cm/sup -3/, short channel effects (down to 80 nm) and high temperatures (up to 200 degrees C). Recently, we have also implemented and validated it in a Verilog-A module. Good agreements between device measurements and simulations have been obtained in all operation regions and at different temperatures.
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Alvarado, J., Kilchytska, V., Flandre, D., Conde, J., Estrada, M., & Cerdeira, A. (2009). Continuous compact model for MuGFETs simulations. Proccedings of MIXDES 2009-16th International Conference Mixed Design of Integrated Circuits & Systems (MIXDES), 45-50. https://hdl.handle.net/2078.5/252943