Thermal sensing performance of lateral SOI PIN diodes in the 90-400 K range
(2009) 2009 IEEE International SOI Conference — Location: Foster City, CA, USA (5.October.2009)
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- Abstract
- In this work the performance of SOI PIN diodes for the implementation of temperature sensors has been presented. Experimental results of diodes from two different technologies showed that the sensitivity and the range of temperature over which the response is fairly fitted by the existing model are affected by the forward current imposed to the diode. It has been shown that these diodes are suitable for the temperature sensing in a wide temperature range (from 90 to 400 K) and may reach high accuracy, with error smaller than 1 K depending on the temperature range and bias current.
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de Souza, M., Rue, B., Flandre, D., & Pavanello, M. A. (2009). Thermal sensing performance of lateral SOI PIN diodes in the 90-400 K range. Proceedings of the 2009 IEEE International SOI Conference, 2. https://doi.org/10.1109/SOI.2009.5318770