UTBB SOI MOSFETs analog figures of merit: effect of ground plane and asymmetric double-gate regime

Md Arshad, M.K.;Kilchytska, Valeriya;Makovejev, Sergej;Olsen, S.H.;Flandre, Denis;et.al.
(2012) Eighth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits – EuroSOI’12 — Location: Montpellier (France) (23.January.2012)

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Abstract
In this work, we experimentally investigate the effect of ground plane (GP) on analog figures of merit (FoM) of ultra-thin body and thin buried oxide (UTBB) SOI MOSFETs. Both n- and p-type GP configurations are considered. Next, we demonstrate that application of asymmetric double-gate regime allows for the improvement of analog FoM in UTBB SOI MOSFETs with GP.
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Md Arshad, M. K., Kilchytska, V., Makovejev, S., Olsen, S. H., Andrieu, F., Raskin, J.-P., & Flandre, D. (2012). UTBB SOI MOSFETs analog figures of merit: effect of ground plane and asymmetric double-gate regime. Proceedings of the Eighth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits – EuroSOI’12, 111-112. https://hdl.handle.net/2078.5/252933