Routes towards novel active pressure sensors in SOI technology

Olbrechts, Benoit;Rue, Bertrand;Pardoen, Thomas;Flandre, Denis;Raskin, Jean-Pierre
(2010) 6th International SemOI Conference and 1st Ukrainian-French Seminar “Semiconductor-on-Insulator materials, devices and circuits: physics, technology and diagnostics” — Location: Kyiv, Ukraine (25.October.2010)

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Abstract
In this presentation, novel pressure sensors approach is proposed and described. Active devices and oscillating circuits are directly integrated on very thin dielectric membranes as pressure transducers. Involved patterning of the membrane is supposed to cause a drop of mechanical robustness. Finite elements simulations are performed in order to better understand stress/strain distribution and as an attempt to explain the early burst of patterned membranes. Smart circuit designs are reported as solutions with high sensitivity and reduced footprint on membranes.
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Olbrechts, B., Rue, B., Pardoen, T., Flandre, D., & Raskin, J.-P. (2010). Routes towards novel active pressure sensors in SOI technology. Proceedings of the 6th International SemOI Conference and 1st Ukrainian-French Seminar “Semiconductor-on-Insulator materials, devices and circuits: physics, technology and diagnostics”, p. paper 36. https://hdl.handle.net/2078.5/252932