Innovative Frequency Output Pressure Sensor with Single SOI NMOSFET Suspended Transducer
(2011) IEEE International SOI Conference(SOI 2011) — Location: Tempe (USA) (3.October.2011)
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- Abstract
- This paper traces a significant step towards the concept of active pressure sensor on very thin dielectric membranes validation. By the fabrication and characterization of a single device architecture used as transducer and placed at the center of a small rectangular membrane, key factors as compactness, sensitivity and robustness are uncompromised. Finally, one can positively notice the process window enlargement involved by the central position of the transducer which corresponds to relaxing the dependence on membranes borders definition.
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Citations
Olbrechts, B., Rue, B., Flandre, D., & Raskin, J.-P. (2011). Innovative Frequency Output Pressure Sensor with Single SOI NMOSFET Suspended Transducer. Proceedings of the IEEE International SOI Conference(SOI 2011), 1-2. https://doi.org/10.1109/SOI.2011.6081790