Self-heating and substrate effects in ultra-thin body ultra-thin BOX devices
(2011) The 12th International Conference on Ultimate Integration on Silicon – ULIS 2011 — Location: Tyndall Institute, Cork, Ireland (14.March.2011)
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- Abstract
- Self-heating and substrate effects are discussed and qualitatively compared in the ultra-thin body ultra-thin BOX (UTB*2) devices without a ground plane. Ultra-thin body is aggravating thermal properties of the devices due to the interface effects. Ultra-thin BOX (10 nm) improves heat dissipation from the channel to the bulk silicon substrate but also results in strongly pronounced substrate effects. It is observed that output conductance degradation in the UTB*2 devices due to the substrate effects can be as strong as degradation due to the self-heating.
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Makovejev, S., Kilchytska, V., Md Arshad, M. K., Flandre, D., Andrieu, F., Faynot, O., Olsen, S., & Raskin, J.-P. (2011). Self-heating and substrate effects in ultra-thin body ultra-thin BOX devices. Proceedings of the 12th International Conference on Ultimate Integration on Silicon – ULIS 2011, 130-133. https://doi.org/10.1109/ULIS.2011.5758009