FinFET analog characterization from DC to 110 GHz
(2005) First Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits (EUROSOI 2005) — Location: Granada (Spain) (19.January.2005)
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- Abstract
- In this work the analogue performance of 50 nm gate length FinFETs is investigated under static and dynamic conditions up to 110 GHz. The fin width is shown to have a large impact on some analogue figures of merit such as the Early voltage because it determines the existence of volume inversion, full or partial depletion inside the fins. The RF measurements show that a non-uniform silicidation of the three-dimensional polysilicon gate can have a strong impact on the device maximum frequency of oscillation (fmax). However, it is also shown on the basis of experimental and modelled data that process optimization on the gate side as well as source/drain engineering should lead to fmax values higher than 250 GHz, making FinFETs very promising devices for future use in RF applications.
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Citations
Lederer, D., Kilchytska, V., Rudenko, T., Collaert, N., Flandre, D., Dixit, A., De Meyer, K., & Raskin, J.-P. (2005). FinFET analog characterization from DC to 110 GHz. Proceedings of the First Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits (EUROSOI 2005), p. 99-100. https://doi.org/10.1016/j.sse.2005.07.011