Back-gate Bias Influence on the Operation of Lateral SOI PIN Photodiodes at High Temperatures

Novo, Carlo;Giacomini, Renato;Doria, Rodrigo;Afzalian, Aryan;Flandre, Denis
(2013) 2013 EUROSOI Conference — Location: Paris (France) (21.January.2013)

Files

C44-EuroSOI2013_paper_final_proceedings.pdf
  • Restricted Access
  • Adobe PDF
  • 154.12 KB
Request a copy

Details

Authors
  • Novo, CarloCentro Universitario da FEI, Brazil
    Author
  • Giacomini, RenatoCentro Universitario da FEI, Brazil
    Author
  • Doria, RodrigoCentro Universitario da FEI, Brazil
    Author
  • Afzalian, AryanUCLouvain
    Author
  • Flandre, DenisUCLouvain
    Author
Abstract
This paper addresses, for the first time, a simultaneous analysis of back-gate bias and temperature influences on the operation of lateral SOI PIN photodiodes in 300 to 500 K range. Experimental results showed that the operation mode of the photodiodes is affected by back-gate bias, modifying the photogenerated current, which presents its maximum value when the silicon film is laterally depleted, indicating minimal carrier recombination in this condition. The highest signal to noise ratio was obtained for accumulation mode operating at 400K.
Affiliations

Citations

  • APA
  • Chicago
  • FWB

Novo, C., Giacomini, R., Doria, R., Afzalian, A., & Flandre, D. (2013). Back-gate Bias Influence on the Operation of Lateral SOI PIN Photodiodes at High Temperatures. Proceedings of the 2013 EUROSOI Conference, p. 2 pages. https://hdl.handle.net/2078.5/252898