MOSFETs scaling down: advantages and disadvantages for high temperature applications

Kilchytska, Valeriya;Vancaillie, Laurent;de Meyer, K.;Flandre, Denis
(2004) NATO Advanced Research Workshop on “Science and Technology of SOI structures devices operating in a harsh environment” — Location: Kiev (Ukraine) (26.April.2004)

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With technology advances into deep submicron era, new physical phenomena appear and the relative importance of existing phenomena for high-temperature behaviour can change. This paper is focused on the influence of scaling down technology, particularly the decrease in gate oxide thickness and the increase in doping levels on the high-temperature characteristics of SOI and bulk MOSFETs. By examining different device properties, major evolutions in high-temperature behaviour with regards to previous device generations have been identified.
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Kilchytska, V., Vancaillie, L., de Meyer, K., & Flandre, D. (2004). MOSFETs scaling down: advantages and disadvantages for high temperature applications. In Denis Flandre, Alexei N. Nazarov, Peter L.F. Hemment (ed.), Proceedings of the NATO Advanced Research Workshop on Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment (pp. 185-190). https://doi.org/10.1007/1-4020-3013-4_19