Enhanced Stability and Mobility of Solution-Processed Oxide Thin-Film Transistors with Bilayer Terbium-incorporated Indium Oxide Channel
(2022) Applied Physics Letters — Vol. 121, n° 19, p. 21 (2022)
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EnhancedStabilityandMobilityofSolution-ProcessedOxideThin-FilmtransistorswithBilayerTerbium-incorporatedIndiumoxide.pdf
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- Abstract
- The trade-off between mobility and stability in oxide thin-film transistors (TFTs) hinders further advances of active-matrix flat panel display. Herein, a solution-processed bilayer active channel is designed to improve the stability and mobility simultaneously. The optical bandgap and work function of Tb:In2O3 films are modulated by tuning the films thickness and Tb concentration of Tb-doped indium oxide (Tb:In2O3) films. Large conduction band offset is achieved in Tb:In2O3 bilayer channel, which induces accumulation of abundant electrons at the interface. The mobility is significantly improved to 38.2 cm2/Vs, and the photoinduced stability of bilayer Tb:In2O3 TFTs is improved with low threshold voltage shift of 0.26 V and −0.38 V under negative-bias illumination stress (NBIS) and negative-bias temperature illumination stress (NBTIS), respectively.
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Citations
He, P., Ding, C., Li, G., Hu, W., Ma, C., Flandre, D., Iñíguez, B., Liao, L., Lan, L., & Liu, X. (2022). Enhanced Stability and Mobility of Solution-Processed Oxide Thin-Film Transistors with Bilayer Terbium-incorporated Indium Oxide Channel. Applied Physics Letters, 121(19), 21. https://hdl.handle.net/2078.5/252883 (Original work published 2022)