TRAPPISTe pixel sensor with 2 µm SOI technology
(2011) Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment — Vol. 663, p. 19-21 (2011)
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- Abstract
- Tracking for particle physics instrumentation in SOI technology (TRAPPISTe-1) is an R&D project to study the feasibility of manufacturing a monolithic active pixel sensor (MAPS) in silicon on insulator (SOI) technology. The first prototype of this series of sensors has been designed with a 2 μm SOI CMOS technology available in UCL, Louvain-la-Neuve. Simulations are presented for this prototype. Leakage measurements have been done on a photovoltaic cell, manufactured in the same process on a low-resistivity substrate. As a next step, a high-resistivity demonstrator will be designed.
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Citations
Cortina Gil, E., Soung Yee, L., Renaux, C., & Flandre, D. (2011). TRAPPISTe pixel sensor with 2 µm SOI technology. Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment, 663, 19-21. https://doi.org/10.1016/j.nima.2010.06.109 (Original work published 2011)