Review on double-gate MOSFETs and FinFETs modeling
(2013) Facta Universitatis. Series Electronics and Energetics — Vol. 26, n° 3, p. 197-213 (2013)
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- Abstract
- The development of compact models for double-gate (DG) MOSFETs and FinFETs necessary in circuit simulators is an important research field, which allows the efficient practical characterization of these devices, as well as their application in analog circuit design. In this paper we review and assess different approaches for developing core and complete compact models for DG MOSFETs and FinFETs.
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Cerdeira, A., Estrada, M., Alvarado Pulido, J. J., Garduno, I., Contreras, E., Tinoco, J., Iniguez, B., Kilchytska, V., & Flandre, D. (2013). Review on double-gate MOSFETs and FinFETs modeling. Facta Universitatis. Series Electronics and Energetics, 26(3), 197-213. https://doi.org/10.2298/FUEE1303197C (Original work published 2013)