New empirical model for leakage drain current of SOI MOSFETs valid from room to high temperatures
(1996) Journal of Solid-State Devices and Circuits — p. 7-10 (1996)
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Bellodi, M., Martino, J. A., & Flandre, D. (1996). New empirical model for leakage drain current of SOI MOSFETs valid from room to high temperatures. Journal of Solid-State Devices and Circuits, 7-10. https://hdl.handle.net/2078.5/252858 (Original work published 1996)