A new fully-depleted SOI MOSFET macro-model valid from DC to RF
(2001) Tenth International Symposium on Silicon-on-Insulator Technology and Devices — Location: Washington, DC (USA) (25.March.2001)
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- Abstract
- We present a submicron RF fully-depleted SOI MOSFET macro-model based on a complete extrinsic small-signal equivalent circuit and an improved CAD model for the intrinsic device. The delay propagation effects in the channel are modeled by splitting the intrinsic transistor into a series of shorter transistors, for each of which a quasi-static device model can be used. Since the intrinsic device model is charge-based, our RF SOI MOSFET model can be used in both small and large-signal analyses. The model has been validated for frequencies up to 40 GHz and effective channel lengths down to 0.16 mu m.
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Iniguez, B., Raskin, J.-P., Demeûs, L., Nève de Mévergnies, A., Goffioul, M., Simon, P., Vanhoenacker-Janvier, D., & Flandre, D. (2001). A new fully-depleted SOI MOSFET macro-model valid from DC to RF. Electrochemical Society. Proceedings, 3, 193-198. https://hdl.handle.net/2078.5/252849 (Original work published 2001)