Comparison of self-heating and its effect on analogue performance in 28 nm bulk and FDSOI
(2015) Solid-State Electronics — Vol. 115, p. 219-224 (2015)
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- In this work self-heating and its effect on analogue device parameters are compared in 28 nm technology bulk and FDSOI MOS devices. It is shown that for self-heating characterisation in advanced MOSFETs the RF extraction technique is more suitable than the pulsed I–V. It is found that the thermal resistance is ~3.4 times higher and the temperature rise is ~2.5 times higher in 28 nm gate length FDSOI than in bulk. However, in spite of stronger self-heating, FDSOI devices outperform bulk over a wide frequency range. Moreover, device parameters degradation with temperature is attenuated in FDSOI transistors.
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Makovejev, S., Planes, N., Haond, M., Flandre, D., Raskin, J.-P., & Kilchytska, V. (2015). Comparison of self-heating and its effect on analogue performance in 28 nm bulk and FDSOI. Solid-State Electronics, 115, 219-224. https://doi.org/10.1016/j.sse.2015.08.022 (Original work published 2015)