Analysis and Potential of the Bipolar- and Hybrid-Mode Thin-Film SOI MOSFETs for High-Temperature Applications
(2001) HITEN′2001 - International Conference on High Temperature Electronic — Location: Oslo (Norway) (5.June.2001)
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- Abstract
- Besides the fully-depleted SOI MOSFET and its several advantages which have widely been reported in the literature in the last few years [1], thin-film SOI technology also allows for the processing of lateral bipolar transistors. These devices have already shown very good performances in current and voltage references [2,3] and could be integrated in other high-temperature precision analog circuits. In this work, we analyze, from room temperature up to 300°C, the analog performances of the SOI lateral bipolar transistor, by distinguishing two modes of operation: the pure bipolar mode and the hybrid mode. The results are compared with the standard MOSFET performances.
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Adriaensen, S., Dessard, V., & Flandre, D. (2001). Analysis and Potential of the Bipolar- and Hybrid-Mode Thin-Film SOI MOSFETs for High-Temperature Applications. Proceedings of HITEN′2001 - International Conference on High Temperature Electronic, 74-78. https://hdl.handle.net/2078.5/252841