Low Frequency Noise Measurements at Elevated Temperatures on Thin-Film SOI n-MOSFET
(1998) 28th European Solid-State Device Research Conference — Location: Bordeaux (France) (8.September.1998)
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- Abstract
- Low frequency noise measurements at elevated temperatures on thin-film SOI n-MOSFETs have been performed from room temperature up to 250°C. We observe the constancy of l/f noise with temperature while the devices remain fully-depleted whereas a new noise contribution appears under certain conditions. A first-order interpretation is proposed for this additional noise.
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Citations
Dessard, V., & Flandre, D. (1998). Low Frequency Noise Measurements at Elevated Temperatures on Thin-Film SOI n-MOSFET. 28th European Solid-State Device Research Conference, Bordeaux (France). https://hdl.handle.net/2078.5/252839