Comparative Experimental Study of X-Ray Radiation Effects in the Threshold Voltage between the OCTO and Conventional SOI nMOSFETs

de Souza Fino, Leonardo Navarenho;Aparecida Guazzelli da Silveira, Marcilei;Renaux, Christian;Flandre, Denis;Gimenez, Salvador Pinillos
(2013) VIII Workshop on Semiconductors and Micro & Nano Technology (Seminatec 2013) — Location: Campinas (Brazil) (2.May.2013)

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Authors
  • de Souza Fino, Leonardo NavarenhoCentro Universitario da Fei, Sao Paulo/Brazil
    Author
  • Aparecida Guazzelli da Silveira, MarcileiCentro Universitario da Fei, Sao Paulo/Brazil
    Author
  • Renaux, ChristianUCLouvain
    Author
  • Flandre, DenisUCLouvain
    Author
  • Gimenez, Salvador PinillosCentro Universitario da Fei, Sao Paulo/Brazil
    Author
Abstract
This paper describes a comparative experimental study of the influence of Total Ionizing Dose (TID), due the X-ray radiation, in the threshold voltage (VTH) of the OCTO (OSM) and Conventional SOI nMOSFET (CSM). The threshold voltage becomes more negative at high X-ray doses in both devices. The impact of trapped charge in the buried oxide becomes more evident on the conventional device, while the octagonal device exhibits a lower change of the threshold values than the conventional, considering the same gate die area (Ag) and bias conditions.
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de Souza Fino, L. N., Aparecida Guazzelli da Silveira, M., Renaux, C., Flandre, D., & Gimenez, S. P. (2013). Comparative Experimental Study of X-Ray Radiation Effects in the Threshold Voltage between the OCTO and Conventional SOI nMOSFETs. VIII Workshop on Semiconductors and Micro & Nano Technology (Seminatec 2013), Campinas (Brazil). https://hdl.handle.net/2078.5/252826